The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 12, 2017

Filed:

Dec. 09, 2013
Applicant:

Lg Display Co. Ltd., Seoul, KR;

Inventors:

SeYeoul Kwon, Goyang-si, KR;

MinGu Cho, Goyang-si, KR;

Sangcheon Youn, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/036 (2006.01); H01L 27/32 (2006.01); H01L 29/786 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/45 (2006.01); H01L 29/49 (2006.01);
U.S. Cl.
CPC ...
H01L 27/3272 (2013.01); H01L 29/41733 (2013.01); H01L 29/42384 (2013.01); H01L 29/45 (2013.01); H01L 29/4908 (2013.01); H01L 29/7869 (2013.01); H01L 29/78603 (2013.01); H01L 29/78633 (2013.01); H01L 29/78648 (2013.01); H01L 31/036 (2013.01);
Abstract

A thin film transistor, a method of manufacturing the thin film transistor, and a display device including the thin film transistor are provided. The thin film transistor comprises a gate electrode formed on the oxide semiconductor layer such that a first surface of the oxide semiconductor layer faces the gate electrode. A source electrode and a drain electrode are electrically connected to the oxide semiconductor layer, respectively. The oxide semiconductor layer, gate electrode, source electrode and drain electrode are arranged in a coplanar transistor configuration. A light-blocking element is also arranged to shield a second surface of the oxide semiconductor layer from external light.


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