The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 12, 2017
Filed:
Oct. 16, 2014
Applicant:
Sony Corporation, Tokyo, JP;
Inventors:
Assignee:
SONY CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 27/146 (2006.01); H01L 31/10 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14647 (2013.01); H01L 27/1462 (2013.01); H01L 27/1464 (2013.01); H01L 27/14621 (2013.01); H01L 27/14625 (2013.01); H01L 27/14627 (2013.01); H01L 27/14685 (2013.01); H01L 27/14692 (2013.01); H01L 27/14694 (2013.01); H01L 27/14696 (2013.01); H01L 27/14698 (2013.01); H01L 31/10 (2013.01);
Abstract
Provided is an imaging element including: a light receiving elementand a stacked structure bodythat is placed on a light incident side of the light receiving elementand in which a semiconductor layerand a nanocarbon filmto which a prescribed electric potential is applied are stacked from the light receiving element side. The semiconductor layeris made of a wide gap semiconductor with an electron affinity of 3.5 eV or more, or is made of a semiconductor with a band gap of 2.0 eV or more and an electron affinity of 3.5 eV or more.