The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 12, 2017
Filed:
Dec. 10, 2015
Applicants:
Min-sung Song, Hwaseong-si, KR;
Jae-hwang Sim, Hwaseong-si, KR;
Joon-sung Lim, Yongin-si, KR;
Inventors:
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/4763 (2006.01); H01L 27/11573 (2017.01); H01L 21/311 (2006.01); H01L 27/11526 (2017.01); H01L 21/033 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11573 (2013.01); H01L 21/0337 (2013.01); H01L 21/31144 (2013.01); H01L 21/76816 (2013.01); H01L 27/11526 (2013.01);
Abstract
The inventive concepts provide methods for fabricating a semiconductor device and semiconductor devices fabricated by the same. According to the method, conductive lines having a fine pitch smaller than the minimum pitch realized by an exposure process may be formed using two or three photolithography processes and two spacer formation processes. In addition, node separation regions of the conductive lines may be easily formed without a misalignment problem.