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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9761576 B1

PDFFull Text
Date of Patent:
Sep. 12, 2017

Filed:

Apr. 14, 2015

Optoelectronic semiconductor chip and method for fabrication thereof

Applicant:

Osram Opto Semiconductors Gmbh, Regensburg, DE;

Inventors:

Rainer Butendeich, Regensburg, DE;

Alexander Walter, Laaber, DE;

Matthias Peter, Regensburg, DE;

Tobias Meyer, Ihrlerstein, DE;

Tetsuya Taki, Tokyo, JP;

Hubert Maiwald, Neutraubling, DE;

Assignee:

OSRAM Opto Semiconductors GmbH, Regensburg, DE;

Attorney:

Slater Matsil, LLP

Primary Examiner:

Bo Fan

Int. Cl.
CPC ...
H01L 27/02 (2006.01); H01L 33/02 (2010.01); H01L 31/0236 (2006.01); H01L 31/0304 (2006.01); H01L 31/0352 (2006.01); H01L 33/06 (2010.01); H01L 33/08 (2010.01); H01L 33/32 (2010.01); H01L 27/15 (2006.01); H01L 33/24 (2010.01);
U.S. Cl.
CPC ...
H01L 27/0248 (2013.01); H01L 27/15 (2013.01); H01L 31/02363 (2013.01); H01L 31/03044 (2013.01); H01L 31/035236 (2013.01); H01L 33/02 (2013.01); H01L 33/06 (2013.01); H01L 33/08 (2013.01); H01L 33/32 (2013.01); H01L 33/24 (2013.01); H01L 2924/0002 (2013.01);
Abstract

An optoelectronic semiconductor chip has a first semiconductor layer sequence which comprises a multiplicity of microdiodes, and a second semiconductor layer sequence which comprises an active region. The first semiconductor layer sequence and the second semiconductor layer sequence are based on a nitride compound semiconductor material, the first semiconductor layer sequence is before the first semiconductor layer sequence in the direction of growth, and the microdiodes form an ESD protection for the active region.

Find Patent Forward Citations

Butendeich, Rainer. (2017). Optoelectronic semiconductor chip and method for fabrication thereof (U.S. Patent No. 9761576). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9761576

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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