The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 12, 2017

Filed:

Apr. 14, 2015
Applicant:

Osram Opto Semiconductors Gmbh, Regensburg, DE;

Inventors:

Rainer Butendeich, Regensburg, DE;

Alexander Walter, Laaber, DE;

Matthias Peter, Regensburg, DE;

Tobias Meyer, Ihrlerstein, DE;

Tetsuya Taki, Tokyo, JP;

Hubert Maiwald, Neutraubling, DE;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01); H01L 33/02 (2010.01); H01L 31/0236 (2006.01); H01L 31/0304 (2006.01); H01L 31/0352 (2006.01); H01L 33/06 (2010.01); H01L 33/08 (2010.01); H01L 33/32 (2010.01); H01L 27/15 (2006.01); H01L 33/24 (2010.01);
U.S. Cl.
CPC ...
H01L 27/0248 (2013.01); H01L 27/15 (2013.01); H01L 31/02363 (2013.01); H01L 31/03044 (2013.01); H01L 31/035236 (2013.01); H01L 33/02 (2013.01); H01L 33/06 (2013.01); H01L 33/08 (2013.01); H01L 33/32 (2013.01); H01L 33/24 (2013.01); H01L 2924/0002 (2013.01);
Abstract

An optoelectronic semiconductor chip has a first semiconductor layer sequence which comprises a multiplicity of microdiodes, and a second semiconductor layer sequence which comprises an active region. The first semiconductor layer sequence and the second semiconductor layer sequence are based on a nitride compound semiconductor material, the first semiconductor layer sequence is before the first semiconductor layer sequence in the direction of growth, and the microdiodes form an ESD protection for the active region.


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