The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9761544 B1

PDF
Full Text
Expired
Date of Patent:
Sep. 12, 2017

Filed:

Nov. 13, 2015
Applicant:

Noda Screen Co., Ltd., Aichi, JP;

Inventor:

Seisei Oyamada, Komaki, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/45 (2006.01); H01L 23/64 (2006.01); H01L 23/00 (2006.01); H01G 4/33 (2006.01);
U.S. Cl.
CPC ...
H01L 23/642 (2013.01); H01G 4/33 (2013.01); H01L 23/647 (2013.01); H01L 24/06 (2013.01); H01L 24/13 (2013.01); H01L 24/16 (2013.01); H01L 24/09 (2013.01); H01L 24/17 (2013.01); H01L 24/33 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/16265 (2013.01); H01L 2924/14 (2013.01); H01L 2924/19041 (2013.01); H01L 2924/19043 (2013.01); H01L 2924/19103 (2013.01);
Abstract

A semiconductor device is provided with: a semiconductor integrated circuit having a bump mounting surface; and a thin-film capacitor portion connected to the bump mounting surface via a bump. The semiconductor integrated circuit includes a first power supply pad, and a second power supply pad. The thin-film capacitor portion includes a first electrode layer connected to the first power supply pad, a second electrode layer connected to the second power supply pad, and a dielectric layer formed between the first electrode layer and the second electrode layer. The semiconductor device is provided with an electric power supply path configured to supply electric power to the semiconductor integrated circuit, and a thin plate-shaped metal resistor portion provided in the electric power supply path and made from a metal based high-resistance material having a volume resistivity higher than a volume resistivity of the first electrode layer and the second electrode layer.


Find Patent Forward Citations

Oyamada, Seisei. (2017). Semiconductor device (U.S. Patent No. 9761544). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9761544

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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