The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 12, 2017
Filed:
Sep. 01, 2015
Kabushiki Kaisha Toshiba, Minato-ku, Tokyo, JP;
Tatsuro Saito, Yokkaichi Mie, JP;
Masayuki Kitamura, Yokkaichi Mie, JP;
Atsuko Sakata, Yokkaichi Mie, JP;
Makoto Wada, Yokkaichi Mie, JP;
Akihiro Kajita, Yokkaichi Mie, JP;
Tadashi Sakai, Yokohama Kanagawa, JP;
KABUSHIKI KAISHA TOSHIBA, Tokyo, JP;
Abstract
According to one embodiment, a semiconductor device is disclosed. The device includes interconnects each including a catalyst layer and a graphene layer thereon. The catalyst layer includes a first to fifth catalyst regions arranged along a first direction in order of the first to fifth catalyst regions. The first, third and fifth catalyst regions include upper surfaces higher than those of the second and fourth catalyst regions. Adjacent ones of the first to fifth catalyst regions are in contact with each other. A distance between the first and the third catalyst region and a distance between the third and fifth catalyst region are greater than a mean free path of graphene. The graphene layer includes a first graphene layer on the second catalyst region and a second graphene layer on the fourth catalyst region.