The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 12, 2017
Filed:
Jan. 24, 2014
Rutgers, the State University of New Jersey, New Brunswick, NJ (US);
George K. Celler, Summit, NJ (US);
RUTGERS, THE STATE UNIVERSITY OF NEW JERSEY, New Brunswick, NJ (US);
Abstract
Techniques for fabricating thin epitaxial SiC device wafers are described. A bulk SiC wafer is used to provide a seed layer of a thin layer of SiC for epitaxially growing SiC. The seed layer is exfoliated from the bulk SiC after bonding the bulk SiC to a handle substrate. The bulk SiC wafer from which the thin layer of SiC is exfoliated may be re-used in fabricating subsequent thin film epitaxial SiC wafers. After growing epitaxial SiC from the seed layer on the handle substrate, devices may be fabricated in the epitaxial SiC and the handle substrate can be removed. The handle substrate can be re-used in fabricating subsequent thin film epitaxial SiC wafers. The epitaxial SiC can be cut into dies and packaged as an SiC chip or bonded to another substrate, such as a silicon substrate with devices formed thereon.