The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 12, 2017
Filed:
Oct. 08, 2015
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Yun Yang, Shanghai, CN;
Abstract
A method for forming a semiconductor device includes forming a device structure having a floating gate, control gate, sidewall spacers, and source and drain regions. The device structure includes contact-hole regions and non-contact-hole regions. The method also includes forming a photo resist layer overlying the contact hole regions in the device structure and exposing the non-contact-hole regions, and forming a protective layer overlying the sacrificial layer and the exposed non-contact-hole regions. Next, an interlayer dielectric layer overlying the protective layer, and CMP (chemical mechanical polishing) is used to remove the inter-layer dielectric layer and the protective layer from above the photo resist. The photo resist layer is then removed from the contact-hole regions to expose contact holes.