The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 12, 2017
Filed:
May. 08, 2014
Applicant:
Hrl Laboratories, Llc, Malibu, CA (US);
Inventors:
Rongming Chu, Agoura Hills, CA (US);
Xu Chen, Los Angeles, CA (US);
Assignee:
HRL Laboratories, LLC, Malibu, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 21/318 (2006.01); H01L 29/778 (2006.01); H01L 29/20 (2006.01); H01L 21/02 (2006.01); H01L 29/66 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/201 (2006.01); H01L 29/205 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0217 (2013.01); H01L 21/02271 (2013.01); H01L 21/02274 (2013.01); H01L 29/2003 (2013.01); H01L 29/41766 (2013.01); H01L 29/4236 (2013.01); H01L 29/66462 (2013.01); H01L 29/778 (2013.01); H01L 29/7787 (2013.01);
Abstract
A semiconductor structure comprising a layer of a III-N material and at least a portion of said layer being covered by a passivation layer, wherein the passivation layer comprises a first layer of SiN formed on said at least a portion of said III-N material layer and a second layer of SiN formed on said first layer of SiN; the first SiN layer having a first thickness and generating tensile stress in the structure and the second SiN layer having a second thickness and generating compressive stress in the structure.