The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 12, 2017

Filed:

Jan. 31, 2013
Applicant:

Jx Nippon Mining & Metals Corporation, Chiyoda-ku, Tokyo, JP;

Inventors:

Yousuke Endo, Kitaibaraki, JP;

Hideyuki Suzuki, Kitaibaraki, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 14/00 (2006.01); H01J 37/34 (2006.01); C22F 1/16 (2006.01); C23C 14/34 (2006.01); C23C 14/16 (2006.01); B21B 1/46 (2006.01); B21C 23/00 (2006.01); B21J 5/00 (2006.01);
U.S. Cl.
CPC ...
H01J 37/3426 (2013.01); B21B 1/46 (2013.01); B21C 23/00 (2013.01); B21J 5/002 (2013.01); C22F 1/16 (2013.01); C23C 14/16 (2013.01); C23C 14/3414 (2013.01); H01J 37/3423 (2013.01);
Abstract

Provided are an indium cylindrical sputtering target capable of providing good film thickness distribution and a method for production thereof. The indium cylindrical target comprises crystal grains whose average size is 1 mm to 20 mm over its surface to be sputtered. The method for manufacturing the indium cylindrical target includes the steps of: casting a semi-finished product of an indium cylindrical target integrated with a backing tube; and subjecting the semi-finished product to plastic working in its radial direction, wherein the plastic working is performed with a total thickness reduction rate of at least 10% over its longitudinal direction.


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