The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 12, 2017
Filed:
Feb. 13, 2014
Applicant:
Mitsubishi Electric Corporation, Tokyo, JP;
Inventor:
Shoichi Kuga, Tokyo, JP;
Assignee:
Mitsubishi Electric Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03F 7/16 (2006.01); H01L 21/02 (2006.01); H01L 21/027 (2006.01); H01L 21/3105 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
G03F 7/168 (2013.01); G03F 7/162 (2013.01); H01L 21/0206 (2013.01); H01L 21/0273 (2013.01); H01L 21/02087 (2013.01); H01L 21/31058 (2013.01); H01L 21/67051 (2013.01); H01L 21/67103 (2013.01); H01L 2223/54493 (2013.01);
Abstract
A semiconductor device manufacturing method of the present invention includes a coating step of coating a front surface of a wafer with a material containing a solvent, a volatilization step of volatilizing the solvent by heating the material, and a rinse step of jetting an edge rinse solution for removing the material from a first nozzle to a peripheral portion of the front surface of the wafer while rotating the wafer.