The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 12, 2017
Filed:
Dec. 18, 2014
Samsung Display Co., Ltd., Yongin, Gyeonggi-do, KR;
Ki-Hyun Cho, Suwon-si, KR;
Sung-Kyun Park, Suwon-si, KR;
Ji-Hyun Kim, Suwon-si, KR;
Jeong-Min Park, Seoul, KR;
Jung-Soo Lee, Seoul, KR;
Jun Chun, Yongin-si, KR;
Jin-Ho Ju, Seoul, KR;
Samsung Display Co., Ltd., Yongin-si, KR;
Abstract
A thin film transistor substrate includes a gate electrode on a base substrate, an active pattern on the gate electrode, a source electrode on a first end of the active pattern, a drain electrode on a second end of the active pattern, an organic insulation layer on the source electrode and the drain electrode, and a transparent electrode contacting the drain electrode through a contact opening in the organic insulation layer. The drain electrode is spaced from the source electrode. The organic insulation layer includes a first thickness portion around the contact opening and a second thickness portion adjacent to the first thickness portion. The second thickness portion has a thickness greater than that of the first thickness portion.