The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 12, 2017
Filed:
Oct. 15, 2014
Applicant:
Seiko Epson Corporation, Tokyo, JP;
Inventors:
Yukimune Watanabe, Hokuto, JP;
Noriyasu Kawana, Chino, JP;
Assignee:
SEIKO EPSON CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/16 (2006.01); H01L 21/02 (2006.01); C30B 25/18 (2006.01); C30B 29/36 (2006.01);
U.S. Cl.
CPC ...
C30B 25/183 (2013.01); C30B 25/186 (2013.01); C30B 29/36 (2013.01); H01L 21/0262 (2013.01); H01L 21/02381 (2013.01); H01L 21/02447 (2013.01); H01L 21/02529 (2013.01); H01L 21/02598 (2013.01); H01L 21/02658 (2013.01); H01L 29/1608 (2013.01);
Abstract
A 3C-SiC epitaxial layer is produced by a production method including: epitaxially growing a first 3C-SiC layer on a Si substrate; oxidizing the first 3C-SiC layer; removing an oxide film on a surface of the 3C-SiC layer; and epitaxially growing a second 3C-SiC layer on the 3C-SiC layer after the oxide film is removed.