The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 12, 2017

Filed:

Feb. 27, 2015
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Sunghoon Lee, Seoul, KR;

Dongouk Kim, Pyeongtaek-si, KR;

Joonyong Park, Suwon-si, KR;

Jihyun Bae, Seoul, KR;

Bongsu Shin, Seoul, KR;

Hongseok Lee, Seongnam-si, KR;

Jaeseung Chung, Seoul, KR;

Sukgyu Hahm, Gyeongsangbuk-do, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B29C 59/02 (2006.01); G02B 5/30 (2006.01); G03F 7/00 (2006.01); G02B 1/12 (2006.01); B29K 25/00 (2006.01); B29K 33/00 (2006.01);
U.S. Cl.
CPC ...
B29C 59/026 (2013.01); G02B 5/3058 (2013.01); G02B 5/3066 (2013.01); G03F 7/0002 (2013.01); B29K 2025/06 (2013.01); B29K 2033/12 (2013.01); G02B 1/12 (2013.01); G02B 2207/101 (2013.01); Y10T 428/2457 (2015.01);
Abstract

A patterning method using an imprint mold, to form an imprinted pattern structure, includes providing a resist layer from which the pattern structure will be formed, performing a first imprint process on a first area of the resist layer by using the imprint mold to form a first pattern of the pattern structure through deformation of the resist layer in the first area, and performing a second imprint process on a second area of the resist layer by using the imprint mold to form a second pattern of the pattern structure through deformation of the resist layer in the second area. The first and second areas are overlapped with each other in a third area of the resist layer, and the performing the second imprint process deforms a first portion of the first pattern in the third area to form the second pattern.


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