The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 05, 2017

Filed:

Oct. 07, 2013
Applicant:

Fujitsu Limited, Kawasaki-shi, Kanagawa, JP;

Inventor:

Hideki Oku, Isehara, JP;

Assignee:

FUJITSU LIMITED, Kawasaki, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03F 3/08 (2006.01); H03G 9/00 (2006.01); H03G 9/02 (2006.01);
U.S. Cl.
CPC ...
H03F 3/08 (2013.01); H03F 3/082 (2013.01); H03G 9/005 (2013.01); H03G 9/025 (2013.01);
Abstract

An amplifier circuit includes: a first transistor and a second transistor of which collectors/drains are coupled to a first power-source via a first load-impedance-element and the first power-source via a second load-impedance-element, respectively; a gain-adjustment-resistance-element that is connected to an emitter/source of the first transistor and an emitter/source of the second transistor; a first current-source and a second current-source that are connected to the emitters/the sources of the first transistor and the second transistor respectively, and a second power-source; a third transistor and a fourth transistor of which collectors/drains are connected to the first power-source and bases/gates are connected to the first load-impedance-element and the second load-impedance-element, respectively; a first feedback-resistance-element that is connected to a base/gate of the first transistor and an emitter/source of the third transistor; and a second feedback-resistance-element that is connected to a base/gate of the second transistor and an emitter/source of the fourth transistor.


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