The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 05, 2017

Filed:

Jul. 05, 2016
Applicant:

Raytheon Company, Waltham, MA (US);

Inventors:

Christopher M. Laighton, Boxborough, MA (US);

Istvan Rodriguez, Chelsea, MA (US);

Alan J. Bielunis, Hampstead, NH (US);

Assignee:

Raytheon Company, Waltham, MA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01R 12/00 (2006.01); H05K 1/00 (2006.01); H01R 12/70 (2011.01); H01R 43/02 (2006.01); H01R 24/50 (2011.01); H01R 103/00 (2006.01);
U.S. Cl.
CPC ...
H01R 12/707 (2013.01); H01R 24/50 (2013.01); H01R 43/0256 (2013.01); H01R 2103/00 (2013.01);
Abstract

A high power RF connector receptacle having a solderable pin, an outer connector receptacle shell and a high breakdown voltage dielectric such as Silicon Carbide. The connector receptacle can be completed as a stepped process where the Silicon Carbide substrate can be mounted to the package, the pin can be dropped into place and soldered, and then the outer shell can be soldered onto the SiC substrate. Alternatively, the SiC, pin and outer shell can be assembled as a subassembly and then soldered to the package. The combination of SiC and solder gives a hermetic seal to the package. In addition, the SiC has an extraordinarily high dielectric breakdown voltage for high power connections.


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