The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 05, 2017
Filed:
Jul. 15, 2016
Applicant:
Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken, JP;
Inventor:
Yusuke Nishido, Kanagawa, JP;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/52 (2010.01); H01L 51/52 (2006.01); C23F 1/02 (2006.01); H01L 21/033 (2006.01); C23F 1/12 (2006.01); C23F 1/44 (2006.01); H01L 51/56 (2006.01);
U.S. Cl.
CPC ...
H01L 51/5281 (2013.01); C23F 1/02 (2013.01); C23F 1/12 (2013.01); C23F 1/44 (2013.01); H01L 21/0332 (2013.01); H01L 21/0337 (2013.01); H01L 33/52 (2013.01); H01L 51/52 (2013.01); H01L 51/524 (2013.01); H01L 51/5246 (2013.01); H01L 51/56 (2013.01); Y10T 428/24355 (2015.01);
Abstract
A novel method for forming projections and depressions is provided. A novel sealing structure is provided. A novel light-emitting device is provided. A first step of forming a film containing at least two kinds of metals having different etching rates over a surface; a second step of heating the film so that the metal having a lower etching rate segregates; a third step of selectively etching the metal having a higher etching rate; and a fourth step of selectively etching the surface using a residue containing the metal having a lower etching rate are included.