The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 05, 2017

Filed:

Oct. 09, 2015
Applicant:

Advanced Optoelectronic Technology, Inc., Hsinchu Hsien, TW;

Inventors:

Chien-Shiang Huang, Hsinchu, TW;

Tzu-Chien Hung, Hsinchu, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/40 (2010.01); H01L 33/38 (2010.01);
U.S. Cl.
CPC ...
H01L 33/40 (2013.01); H01L 33/405 (2013.01); H01L 33/38 (2013.01);
Abstract

An LED die includes a base, and an N-typed semiconductor layer, an active layer and a P-typed semiconductor layer formed on the base that order. The LED die also includes an N-electrode and a P-electrode. The N-electrode is arranged on the N-typed semiconductor layer and electrically connected therewith. The P-electrode is arranged on the P-typed semiconductor layer and electrically connected therewith. The LED die further includes a barrier layer arranged between the P-typed semiconductor layer and the P-electrode. The barrier layer includes at least two materials of Cr, Ni and Ti. The at least two materials of Cr, Ni and Ti are stacked together to form the barrier layer.


Find Patent Forward Citations

Loading…