The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9755107 B1

Date of Patent:

Sep. 05, 2017

Filed:

Sep. 02, 2016

Group iii nitride semiconductor light-emitting device

Applicant:

Toyoda Gosei Co., Ltd., Kiyosu-shi, JP;

Inventor:

Koji Okuno, Kiyosu, JP;

Assignee:

TOYODA GOSEI CO., LTD., Kiyosu-Shi, Aichi-Ken, JP;

Attorney:

McGinn IP Law Group, PLLC

Primary Examiner:

Ermias Woldegeorgis

Int. Cl.

CPC ...

H01L 33/14 (2010.01); H01L 33/00 (2010.01); H01L 33/44 (2010.01); H01L 33/04 (2010.01); H01L 33/32 (2010.01);

U.S. Cl.

CPC ...

H01L 33/14 (2013.01); H01L 33/0025 (2013.01); H01L 33/0075 (2013.01); H01L 33/04 (2013.01); H01L 33/32 (2013.01); H01L 33/44 (2013.01);

Abstract

The present invention provides a Group III nitride semiconductor light-emitting device exhibiting improved emission efficiency. The Group III nitride semiconductor light-emitting device includes a base layer, an n-type superlattice layer, a light-emitting layer, and a p-type cladding layer, each of the layers being made of Group III nitride semiconductor. An electron injection adjusting layer comprising a single AlGaN (0<x<1) layer and having a thickness of 5 Å to 30 Å is formed in the base layer. The n-type superlattice layer is a superlattice layer having a periodic structure of an InGaN (0<y<1) layer, an i-GaN layer, and an n-GaN layer. The electron injection adjusting layer has a thickness of 5 Å to 30 Å and an Al composition ratio of 0.15 to 0.5.

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