The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 05, 2017
Filed:
Nov. 20, 2015
Renesas Electronics Corporation, Tokyo, JP;
Atsushi Sakai, Tokyo, JP;
Katsumi Eikyu, Tokyo, JP;
RENESAS ELECTRONICS CORPORATION, Tokyo, JP;
Abstract
To provide an imaging device equipped with a photodiode, which is capable of enhancing both of a capacity and sensitivity. In an area of a P-type well in which a photodiode is formed, a P-type impurity region is formed from the surface of the P-type well to a predetermined depth. Further, an N-type impurity region is formed to extend to a deeper position. N-type impurity regions and P-type impurity regions respectively extending in a gate width direction from a lower part of the N-type impurity region to a deeper position so as to contact the N-type impurity region are alternately arranged in a plural form along a gate length direction in a form to contact each other.