The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 05, 2017
Filed:
Dec. 17, 2014
Centre National DE LA Recherche Scientifique—cnrs, Paris, FR;
Office National D'etudes ET DE Recherches Aérospatiales—onera, Palaiseau, FR;
Benjamin Portier, Cachan, FR;
Michaël Verdun, Orsay, FR;
Riad Haidar, Paris, FR;
Jean-Luc Pelouard, Paris, FR;
Fabrice Pardo, Vitry-sur-Seine, FR;
CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE—CNRS, Paris, FR;
Office National d'Etudes et de Recherches Aérospatials—ONERA, Palaiseau, FR;
Abstract
According to one aspect, the invention relates to an element for quantum photodetection of an incident radiation in a spectral band centered around a central wavelength λ, having a front surface intended for receiving said radiation, and including: a stack of layers of semiconductor material forming a PN or PIN junction and including at least one layer made of an absorbent semiconductor material having a cut-off wavelength λ>λ, the stack of layers of semiconductor material forming a resonant optical cavity; and a structure for coupling the incident radiation with the optical cavity such as to form a resonance at the central wavelength λallowing the absorption of more than 80% in the layer of absorbent semiconductor material at said central wavelength, and an absence of resonance at the radiative wavelength λ, wherein the radiative wavelength λis the wavelength for which, at operating temperature, the radiative recombination rate is the highest.