The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 05, 2017
Filed:
Aug. 27, 2013
Yongping Ding, Sunnyvale, CA (US);
Sik Lui, Sunnyvale, CA (US);
Madhur Bobde, San Jose, CA (US);
Lei Zhang, Sunnyvale, CA (US);
Jongoh Kim, Portland, OR (US);
John Chen, Palo Alto, CA (US);
Yongping Ding, Sunnyvale, CA (US);
Sik Lui, Sunnyvale, CA (US);
Madhur Bobde, San Jose, CA (US);
Lei Zhang, Sunnyvale, CA (US);
Jongoh Kim, Portland, OR (US);
John Chen, Palo Alto, CA (US);
Alpha and Omega Semiconductor Incorporated, Sunnyvale, CA (US);
Abstract
A semiconductor power device disposed on a semiconductor substrate comprises a plurality of trenches formed at a top portion of the semiconductor substrate extending laterally across the semiconductor substrate along a longitudinal direction each having a nonlinear portion comprising a sidewall perpendicular to a longitudinal direction of the trench and extends vertically downward from a top surface to a trench bottom surface. The semiconductor power device further includes a trench bottom dopant region disposed below the trench bottom surface and a sidewall dopant region disposed along the perpendicular sidewall wherein the sidewall dopant region extends vertically downward along the perpendicular sidewall of the trench to reach the trench bottom dopant region and pick-up the trench bottom dopant region to the top surface of the semiconductor substrate.