The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 05, 2017
Filed:
Dec. 04, 2014
Applicant:
Shuk-wa Fung, Hong Kong, CN;
Inventors:
Assignee:
Other;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/739 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/08 (2006.01); H01L 21/265 (2006.01); H01L 21/285 (2006.01); H01L 21/3065 (2006.01); H01L 21/324 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66348 (2013.01); H01L 21/265 (2013.01); H01L 21/28556 (2013.01); H01L 21/3065 (2013.01); H01L 21/324 (2013.01); H01L 29/0649 (2013.01); H01L 29/0804 (2013.01); H01L 29/0821 (2013.01); H01L 29/0856 (2013.01); H01L 29/1095 (2013.01); H01L 29/41766 (2013.01); H01L 29/6634 (2013.01); H01L 29/66295 (2013.01); H01L 29/66333 (2013.01); H01L 29/66727 (2013.01); H01L 29/66734 (2013.01); H01L 29/7397 (2013.01); H01L 29/78 (2013.01); H01L 29/7813 (2013.01);
Abstract
Provided in the present invention is a trench gate power MOSFET (TMOS/UMOS) structure with a heavily doped polysilicon source region. The polysilicon source region is formed by deposition, and a trench-shaped contact hole is used at the source region, in order to attain low contact resistance and small cell pitch. The present invention may also be implemented in an IGBT.