The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 05, 2017
Filed:
Apr. 05, 2013
Applicant:
Rftron Co., Ltd., Seoul, KR;
Inventors:
Kookrin Char, Seongnam-si, KR;
Jisoon Ihm, Seoul, KR;
Assignee:
RFTRON CO., LTD., Seoul, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01B 1/08 (2006.01); H01L 31/00 (2006.01); H01L 29/24 (2006.01); H01L 21/02 (2006.01); H01L 31/0224 (2006.01); H01L 31/18 (2006.01); C23C 14/08 (2006.01); C23C 16/40 (2006.01); C30B 25/02 (2006.01); C30B 29/22 (2006.01); H01L 33/42 (2010.01); G01N 27/12 (2006.01);
U.S. Cl.
CPC ...
H01L 29/24 (2013.01); C23C 14/08 (2013.01); C23C 16/40 (2013.01); C30B 25/02 (2013.01); C30B 29/22 (2013.01); H01L 21/02414 (2013.01); H01L 21/02565 (2013.01); H01L 21/02612 (2013.01); H01L 31/022466 (2013.01); H01L 31/1884 (2013.01); G01N 27/125 (2013.01); H01L 33/42 (2013.01); Y02E 10/50 (2013.01);
Abstract
The present invention relates to a transparent compound semiconductor and to a production method therefor, and is adapted to provide a transparent compound semiconductor of high stability and charge mobility while being transparent. The transparent compound semiconductor according to the present invention has a composition of BaLaSnO(0<x<0.1) and has a charge mobility of at least 10 cm/V·sec.