The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 05, 2017

Filed:

Sep. 28, 2012
Applicants:

The University of Kentucky Research Foundation, Lexington, KY (US);

The University of Louisville Research Foundation, Inc., Louisville, KY (US);

Inventors:

Madhu Menon, Lexington, KY (US);

Michael Sheetz, Lexington, KY (US);

Mahendra Kumar Sunkara, Louisville, KY (US);

Chandrashekhar Pendyala, Chandler, AZ (US);

Swathi Sunkara, Louisville, KY (US);

Jacek B. Jasinski, Louisville, KY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C25B 1/04 (2006.01); H01L 29/20 (2006.01); H01L 21/02 (2006.01); C25B 1/00 (2006.01);
U.S. Cl.
CPC ...
H01L 29/2003 (2013.01); C25B 1/003 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02425 (2013.01); H01L 21/02549 (2013.01); H01L 21/02573 (2013.01); Y02P 20/135 (2015.11);
Abstract

The composition of matter comprising Ga(Sb)Nwhere x=0.01 to 0.06 is characterized by a band gap between 2.4 and 1.7 eV. A semiconductor device includes a semiconductor layer of that composition. A photoelectric cell includes that semiconductor device.


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