The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 05, 2017
Filed:
Nov. 03, 2016
Hyundai Motor Company, Seoul, KR;
Dae Hwan Chun, Gwangmyeong-si, KR;
Youngkyun Jung, Seoul, KR;
Nack Yong Joo, Hanam-si, KR;
Junghee Park, Suwon-si, KR;
Jong Seok Lee, Gyeonggi-do, KR;
Hyundai Motor Company, Seoul, KR;
Abstract
A semiconductor device includes a first n− type layer and a second n− type layer that are sequentially disposed on a first surface of an n+ type silicon carbide substrate; a first trench and a second trench that are disposed at the second n− type layer and are spaced apart from each other; a p type region surrounding a lateral surface and a lower surface of the first trench; an n+ type region disposed on the p type region and the second n− type layer; a gate insulating layer disposed in the second trench; a gate electrode disposed on the gate insulating layer; an oxide layer disposed on the gate electrode; a source electrode disposed on the oxide layer and the n+ type region disposed in the first trench; and a drain electrode disposed at a second surface of the n+ type silicon carbide substrate.