The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 05, 2017
Filed:
Apr. 22, 2015
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
Wai-Kin Li, Beacon, NY (US);
Chengwen Pei, Danbury, CT (US);
Ping-Chuan Wang, Hopewell Junction, NY (US);
Assignee:
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 49/02 (2006.01); H01L 27/06 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
H01L 28/92 (2013.01); H01L 21/823821 (2013.01); H01L 21/823842 (2013.01); H01L 21/823857 (2013.01); H01L 27/0629 (2013.01);
Abstract
High density capacitor structures based on an array of semiconductor nanorods are provided. The high density capacitor structure can be a plurality of capacitors in which each of the semiconductor nanorods serves as a bottom electrode for one of the plurality of capacitors, or a large-area metal-insulator-metal (MIM) capacitor in which the semiconductor nanorods serve as a support structure for a bottom electrode of the MIM capacitor subsequently formed.