The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 05, 2017
Filed:
Aug. 18, 2016
Applicant:
Sandisk Technologies Llc, Plano, TX (US);
Inventors:
Seje Takaki, Yokkaichi, JP;
Manabu Hayashi, Yokkaichi, JP;
Ryousuke Itou, Yokkaichi, JP;
Takuro Maede, Yokkaichi, JP;
Kengo Kajiwara, Yokkaichi, JP;
Tetsuya Yamada, Yokkaichi, JP;
Yusuke Oda, Nagoya, JP;
Assignee:
SanDisk Technologies LLC, Plano, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11551 (2017.01); H01L 27/24 (2006.01); H01L 27/11556 (2017.01); H01L 27/11582 (2017.01); H01L 29/66 (2006.01); H01L 29/423 (2006.01); H01L 29/78 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 27/2454 (2013.01); H01L 27/11551 (2013.01); H01L 27/11556 (2013.01); H01L 27/11582 (2013.01); H01L 29/41791 (2013.01); H01L 29/42392 (2013.01); H01L 29/66666 (2013.01); H01L 29/785 (2013.01);
Abstract
A method is provided that includes forming a transistor by forming a gate disposed in a first direction above a substrate, the gate including a first bridge portion and a second bridge portion, forming the first bridge portion extending in the first direction and disposed near a top of the gate, and forming the second bridge portion extending in the first direction and disposed near a bottom of the gate.