The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 05, 2017

Filed:

Mar. 22, 2016
Applicant:

General Electric Company, Schenectady, NY (US);

Inventors:

Jianjun Guo, Ballston Spa, NY (US);

Sergei Ivanovich Dolinsky, Clifton Park, NY (US);

Jonathan David Short, Saratoga Springs, NY (US);

Assignee:

General Electric Company, Niskayuna, NY (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 31/107 (2006.01); H01L 31/0352 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14612 (2013.01); H01L 27/14663 (2013.01); H01L 31/035272 (2013.01);
Abstract

Embodiments of a solid state photomultiplier are provided herein. In some embodiments, a solid state photomultiplier may include an epitaxial layer, a high voltage region formed in the epitaxial layer, a low voltage region formed in the epitaxial layer, and an intermediate region disposed between the high voltage region and low voltage region, wherein the high voltage region is electrically coupled to the low voltage region via the intermediate region, and wherein at least a portion of the epitaxial layer is disposed between the high voltage region and intermediate region and between the low voltage region and the intermediate region.


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