The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 05, 2017
Filed:
Sep. 02, 2014
Sharp Kabushiki Kaisha, Osaka-shi, Osaka, JP;
Naoki Ueda, Osaka, JP;
Sumio Katoh, Osaka, JP;
Sharp Kabushiki Kaisha, Sakai, JP;
Abstract
A semiconductor device () includes: a first transistor (A) having a first channel length Land a first channel width W; and a second transistor (B) having a second channel length Land a second channel width W, wherein the first transistor (A) and the second transistor (B) include an active layer formed from a common oxide semiconductor film, the first transistor (A) is a memory transistor which is capable of being irreversibly changed from a semiconductor state where a drain current Isd depends on a gate voltage Vg to a resistor state where the drain current Isd does not depend on the gate voltage Vg, and the first channel length Lis smaller than the second channel length L