The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 05, 2017
Filed:
Dec. 29, 2015
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
Ralf Richter, Dresden, DE;
Sven Beyer, Dresden, DE;
Assignee:
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/115 (2017.01); H01L 27/11531 (2017.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 27/11521 (2017.01); H01L 21/762 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11531 (2013.01); H01L 21/76283 (2013.01); H01L 27/11521 (2013.01); H01L 29/0649 (2013.01); H01L 29/42328 (2013.01);
Abstract
A method of manufacturing a semiconductor device is provided which includes providing a semiconductor layer having a first area and a second area separated from the first area by an isolation structure, forming a protection layer on the isolation structure, forming at least partly a memory device in and on the first area, removing the protection layer, and forming a field effect transistor (FET) in and over the second area after the removal of the protection layer.