The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 05, 2017

Filed:

Jan. 14, 2016
Applicants:

Suehye Park, Seoul, KR;

Yoonhae Kim, Suwon-Si, KR;

Deokhan Bae, Hwaseong-Si, KR;

Jaeran Jang, Suwon-Si, KR;

Hwichan Jun, Yongin-Si, KR;

Inventors:

Suehye Park, Seoul, KR;

Yoonhae Kim, Suwon-Si, KR;

Deokhan Bae, Hwaseong-Si, KR;

Jaeran Jang, Suwon-Si, KR;

Hwichan Jun, Yongin-Si, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 23/485 (2006.01);
U.S. Cl.
CPC ...
H01L 27/088 (2013.01); H01L 23/485 (2013.01);
Abstract

A semiconductor device includes a substrate provided with active patterns, gate electrodes extending across the active patterns, source/drain regions provided in upper portions of the active patterns between the gate electrodes, respectively, and first contacts and second contacts provided between the gate electrodes and electrically connected to the source/drain regions, respectively. The first and second contacts are disposed in such a way that a contact center line thereof is spaced apart from a corresponding gate center line by first and second distances. The first distance differs from the second distance.


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