The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 05, 2017

Filed:

Apr. 20, 2016
Applicant:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Inventors:

Kazuhito Furumoto, Mie, JP;

Toshiyuki Sasaki, Mie, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/52 (2006.01); H01L 23/532 (2006.01); H01L 27/1157 (2017.01); H01L 27/11582 (2017.01); H01L 23/528 (2006.01); H01L 23/522 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 23/53266 (2013.01); H01L 21/76816 (2013.01); H01L 21/76843 (2013.01); H01L 21/76897 (2013.01); H01L 23/5226 (2013.01); H01L 23/5283 (2013.01); H01L 27/1157 (2013.01); H01L 27/11582 (2013.01);
Abstract

A semiconductor memory device according to one embodiment includes a plurality of lower electrode films stacked separated from each other, an upper electrode film provided above the plurality of lower electrode films, a semiconductor pillar extending in an arrangement direction of the plurality of lower electrode films and the upper electrode film, a memory film provided between the semiconductor pillar and one of the plurality of lower electrode films and between the semiconductor pillar and the upper electrode film, and a metal-containing layer provided at least one of on a lower surface and an upper surface of the one of the plurality of lower electrode films and between the one of the plurality of lower electrode films and the memory film, the metal-containing layer having a composition different from a composition of the plurality of lower electrode films. The upper electrode film is in contact with the memory film.


Find Patent Forward Citations

Furumoto, Kazuhito. (2017). Semiconductor memory device and method for manufacturing the same (U.S. Patent No. 9754888). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9754888

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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