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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9754863 B1

PDFFull Text
Date of Patent:
Sep. 05, 2017

Filed:

Jun. 09, 2016

Semiconductor device

Applicant:

Fuji Electric Co., Ltd., Kawasaki-shi, JP;

Inventors:

Sota Watanabe, Matsumoto, JP;

Hiroaki Furihata, Azumino, JP;

Makoto Imai, Suwa, JP;

Assignee:

FUJI ELECTRIC CO., LTD., Kawasaki-Shi, JP;

Attorney:

Manabu Kanesaka

Primary Examiner:

Alonzo Chambliss

Int. Cl.
CPC ...
H01L 23/495 (2006.01); H05K 7/10 (2006.01); H01L 21/00 (2006.01); H01L 23/31 (2006.01); H01L 29/739 (2006.01); H01L 29/78 (2006.01); H01L 29/861 (2006.01); H01L 27/082 (2006.01); H01L 27/088 (2006.01); H01L 27/08 (2006.01); H01L 23/49 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49537 (2013.01); H01L 23/3107 (2013.01); H01L 23/49503 (2013.01); H01L 23/49562 (2013.01); H01L 23/49568 (2013.01); H01L 23/49575 (2013.01); H01L 23/49 (2013.01); H01L 27/082 (2013.01); H01L 27/088 (2013.01); H01L 27/0814 (2013.01); H01L 29/7393 (2013.01); H01L 29/78 (2013.01); H01L 29/861 (2013.01); H01L 2224/0603 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48137 (2013.01); H01L 2224/48247 (2013.01); H01L 2924/181 (2013.01); H01L 2924/19107 (2013.01);
Abstract

The semiconductor device improves heat dissipation by loading a diode and a MOSFET or IGBT in a single package. A drain electrode disposed on a rear surface of a MOSFET chip is soldered to an upper surface of a first lead frame, and a cathode electrode disposed on a rear surface of a diode chip is soldered to an upper surface of a second lead frame. Rear surfaces of the first lead frame and second lead frame to which neither the diode chip nor the MOSFET chip is connected are disposed so as to be exposed from a sealing resin.

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Watanabe, Sota. (2017). Semiconductor device (U.S. Patent No. 9754863). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9754863

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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