The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 05, 2017
Filed:
Aug. 04, 2015
Applicant:
Fuji Xerox Co., Ltd., Tokyo, JP;
Inventors:
Takahiro Hashimoto, Kanagawa, JP;
Kenichi Ono, Kanagawa, JP;
Michiaki Murata, Kanagawa, JP;
Hideyuki Ikoma, Kanagawa, JP;
Tsutomu Otsuka, Kanagawa, JP;
Assignee:
FUJI XEROX CO., LTD., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/306 (2006.01); H01L 21/78 (2006.01); H01L 33/00 (2010.01); H01L 21/02 (2006.01); H01L 21/683 (2006.01);
U.S. Cl.
CPC ...
H01L 21/78 (2013.01); H01L 21/02019 (2013.01); H01L 21/30604 (2013.01); H01L 21/30621 (2013.01); H01L 21/6836 (2013.01); H01L 33/0095 (2013.01); H01L 2221/68327 (2013.01); H01L 2221/68381 (2013.01);
Abstract
A method for manufacturing a semiconductor chip includes forming at least a portion of a front-side groove by anisotropic dry etching from a front surface of a substrate along a cutting region; forming a modified region in the substrate along the cutting region by irradiating the inside of the substrate with a laser along the cutting region; and dividing the substrate along the cutting region by applying stress to the substrate.