The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 05, 2017
Filed:
Sep. 08, 2015
Fuji Electric Co., Ltd., Kawasaki-shi, JP;
Shinya Takashima, Hachioji, JP;
Ryo Tanaka, Santa Barbara, CA (US);
Katsunori Ueno, Matsumoto, JP;
Masaharu Edo, Saitama, JP;
FUJI ELECTRIC CO., LTD., Kawasaki-Shi, JP;
Abstract
A method for producing a semiconductor device having a nitride-based semiconductor layer includes forming an aluminum nitride layer on a surface of the nitride-based semiconductor layer at a forming temperature and in a growth atmosphere for aluminum nitride; and performing a thermal treatment on the nitride-based semiconductor layer and the aluminum nitride layer, at a treatment temperature that is higher than the forming temperature and in the growth atmosphere for aluminum nitride. For example, an n-GaN layer is formed on an n-GaN substrate, and thereafter the n-GaN layer is doped with an impurity. A cap layer of an epitaxial film made up of AlN is formed, by MOCVD, on the surface of the n-GaN layer. Thermal treatment for activation annealing activates the impurity in the n-GaN layer in an atmosphere that causes AlN to grow, or in an atmosphere in which growth and decomposition of AlN are substantially balanced.