The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 05, 2017
Filed:
Nov. 02, 2016
SK Hynix Inc., Icheon, KR;
Seoul National University R&db Foundation, Seoul, KR;
Byung Gook Park, Seoul, KR;
Dae Woong Kwon, Seoul, KR;
Do Bin Kim, Seoul, KR;
Sang Ho Lee, Seoul, KR;
SK HYNIX INC., Icheon, KR;
SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION, Seoul, KR;
Abstract
A method of controlling a 3D non-volatile memory device includes initially leveling threshold voltages of the string selection transistors disposed in one or more of the plurality of memory layers to have a predetermined target level; applying a first time varying erase voltage signal having a first time varying section to a first plurality of channel lines of a first memory layer selected among the plurality of memory layers comprising the initially leveled string selection transistors; and setting threshold voltages of the initially leveled string selection transistors in the first memory layer by controlling each of the plurality of string selection lines respectively coupled with the initially leveled string selection transistors during the first time varying section of the first time varying erase voltage signal.