The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 05, 2017
Filed:
Aug. 04, 2016
Vacancy-modulated conductive oxide resistive ram device including an interfacial oxygen source layer
Applicant:
Sandisk Technologies Llc, Plano, TX (US);
Inventors:
Assignee:
SANDISK TECHNOLOGIES LLC, Plano, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 13/00 (2006.01); H01L 45/00 (2006.01); H01L 23/528 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0007 (2013.01); G11C 13/0069 (2013.01); G11C 13/0097 (2013.01); H01L 23/528 (2013.01); H01L 27/2481 (2013.01); H01L 45/08 (2013.01); H01L 45/1246 (2013.01); H01L 45/1253 (2013.01); H01L 45/146 (2013.01); H01L 45/1608 (2013.01); G11C 2013/0078 (2013.01); G11C 2213/32 (2013.01); G11C 2213/52 (2013.01); G11C 2213/55 (2013.01); G11C 2213/71 (2013.01);
Abstract
A vacancy-modulated conductive oxide (VMCO) resistive random access memory (ReRAM) device includes at least one interfacial layer between a semiconductor portion and a titanium oxide portion of a resistive memory element. The at least one interfacial layer includes an oxygen reservoir that can store oxygen atoms during operation of the resistive memory element. The at least one interfacial layer can include an interfacial metal oxide layer, a metal layer, and optionally, a ruthenium layer.