The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 05, 2017
Filed:
Jul. 09, 2015
Applicant:
Hgst, Inc., San Jose, CA (US);
Inventors:
R. Jacob Baker, North Billerica, MA (US);
Ward Parkinson, Boise, ID (US);
Assignee:
HGST, INC., San Jose, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G05F 3/16 (2006.01); G05F 3/26 (2006.01);
U.S. Cl.
CPC ...
G05F 3/267 (2013.01);
Abstract
A method and system for generating a reference voltage are disclosed. The reference voltage is generated by generating a voltage VRIGHT using a first transistor and generating a voltage VBIAS using a second transistor. The gates of the two transistors are connected to a common node VREF, but the loads of the transistors have different resistances. At least one differential pair is used to detect a difference between voltages VRIGHT and VBIAS. VREF is forced to a value at which the source-drain currents in each of the transistors is equal. The transistors sued are NMOS transistors.