The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 05, 2017
Filed:
Jun. 13, 2011
Applicants:
Hitoshi Noguchi, Annaka, JP;
Shozo Shirai, Annaka, JP;
Inventors:
Hitoshi Noguchi, Annaka, JP;
Shozo Shirai, Annaka, JP;
Assignee:
SHIN-ETSU CHEMICAL CO., LTD., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 25/18 (2006.01); C30B 29/04 (2006.01);
U.S. Cl.
CPC ...
C30B 29/04 (2013.01); C30B 25/183 (2013.01); Y10T 428/263 (2015.01); Y10T 428/266 (2015.01); Y10T 428/30 (2015.01);
Abstract
A single-crystal diamond growth base material on which single-crystal diamond is grown having at least a base substrate of a material having a linear expansion coefficient smaller than that of MgO and not smaller than 0.5×10/K; a single-crystal MgO layer formed on a face of the base substrate where the single-crystal diamond is grown by a bonding method; and a film constituted of any one of an iridium film, a rhodium film, and a platinum film heteroepitaxially grown on the single-crystal MgO layer.