The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 05, 2017

Filed:

Dec. 24, 2014
Applicant:

Sumco Corporation, Tokyo, JP;

Inventors:

Kan Yoshitake, Tokyo, JP;

Kimitaka Okamoto, Tokyo, JP;

Haruki Shoji, Tokyo, JP;

Assignee:

SUMCO CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C30B 25/10 (2006.01); C30B 29/06 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
C30B 25/10 (2013.01); C30B 29/06 (2013.01); H01L 21/67115 (2013.01);
Abstract

Disclosed herein is an epitaxial growth apparatus for growing an epitaxial layer on a surface of a wafer. The apparatus includes: a chamber in which the wafer is housed; an upper lamp group that includes a plurality of heating lamps arranged in a ring above the chamber; a lower lamp group that includes a plurality of heating lamps provided below the chamber; a reflection member that is provided inside the ring of the upper lamp group, the reflection member having a substantially cylindrical shape; and an additional reflection member that is provided inside the reflection member, the additional reflection member including a reflection surface that is substantially parallel to the surface of the wafer. The additional reflection member is provided in such a way as to close at least part of an opening of a lower end portion of the reflection member.


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