The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 05, 2017

Filed:

May. 31, 2013
Applicant:

The Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Sciences, Urumqi, Xinjiang, CN;

Inventors:

Shilie Pan, Urumqi, CN;

Hongping Wu, Urumqi, CN;

Hongwei Yu, Urumqi, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C01B 35/10 (2006.01); C30B 11/00 (2006.01); G02F 1/355 (2006.01); C01D 17/00 (2006.01); C30B 9/12 (2006.01); C30B 29/22 (2006.01);
U.S. Cl.
CPC ...
C01D 17/003 (2013.01); C01D 17/00 (2013.01); C30B 9/12 (2013.01); C30B 11/003 (2013.01); C30B 29/22 (2013.01); G02F 1/3551 (2013.01); C01B 35/10 (2013.01); C01P 2002/70 (2013.01);
Abstract

The present invention relates to a cesium borosilicate compound, a nonlinear optical crystal of cesium borosilicate, and a preparation method therefor and a use thereof. The cesium borosilicate compound has a chemical formula of CsBSiOand a molecular weight of 481.15, and is prepared using a solid phase method. The nonlinear optical crystal of the cesium borosilicate compound has a chemical formula of CsBSiOand a molecular weight of 481.15, does not have a center of symmetry, belongs to the tetragonal system with space group Iand unit-cell parameters a=6.731(3) Å, c=9.871(9) Å and V=447.2(5) Å, and has a wide transmittance range. The shortest ultraviolet cutoff edge is smaller than 190 nm, the frequency doubling effect of the crystal is 4.6 KDP, and the crystal is grown by a high-temperature solution spontaneous crystallization method and a flux method. The crystal has advantages of high growth rate, being transparent and inclusion free, low cost having a wide transmittance range, high hardness, good mechanical property, being crack resistant and not prone to deliquescence, being easy to process and store, and the like. The crystal is widely applied to manufacturing of nonlinear optical devices such as frequency doubling generators, frequency up-converters, frequency down-converters or optical parametric oscillators.


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