The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 29, 2017

Filed:

Nov. 29, 2016
Applicant:

Stmicroelectronics (Crolles 2) Sas, Crolles, FR;

Inventors:

Gilles Gasiot, Seyssinet-Pariset, FR;

Victor Malherbe, Grenoble, FR;

Sylvain Clerc, Grenoble, FR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 19/00 (2006.01); H03K 19/003 (2006.01); H03K 19/21 (2006.01); H01L 27/092 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
H03K 19/00338 (2013.01); H01L 21/823892 (2013.01); H01L 27/0928 (2013.01); H03K 19/21 (2013.01);
Abstract

A radiation-hardened logic device includes a first n-channel transistor coupled by its main conducting nodes between an output node of a logic device and a supply voltage rail and a first p-channel transistor coupled by its main conducting nodes between the output node of the logic device and a ground voltage rail. The gates of the first n-channel and p-channel transistors are coupled to the output node.


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