The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 2017
Filed:
Jul. 12, 2016
Applicant:
GE Energy Power Conversion Technology Limited, Rugby, Warwickshire, GB;
Inventors:
Robert Gregory Wagoner, Salem, VA (US);
Tobias Schuetz, Munich, DE;
Todd David Greenleaf, Salem, VA (US);
Terry Michael Tackman, Salem, VA (US);
Assignee:
Primary Examiner:
Int. Cl.
CPC ...
H03K 3/00 (2006.01); H03K 17/567 (2006.01);
U.S. Cl.
CPC ...
H03K 17/567 (2013.01);
Abstract
There are provided methods and systems for operating insulated gate bipolar transistors (IGBTs). For example, there is provided a method that can include detecting a desaturation condition in an IGBT and initiating a turn off procedure when desaturation is detected. The turn off procedure can include holding a gate of the IGBT at at least one voltage level intermediate between a positive rail voltage and a negative rail voltage of an operational range of the IGBT.