The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 2017
Filed:
Dec. 08, 2015
Applicant:
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Inventor:
Junhong Feng, Shanghai, CN;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03B 1/00 (2006.01); H03K 3/00 (2006.01); H03K 17/14 (2006.01); H03K 17/16 (2006.01);
U.S. Cl.
CPC ...
H03K 17/145 (2013.01); H03K 17/161 (2013.01);
Abstract
A transistor device may include an n-type transistor. The transistor device may further include a first bias voltage unit, which is electrically connected to the n-type transistor and configured to apply a first positive bias voltage to a drain terminal of the n-type transistor when the n-type transistor is in an off state. The transistor device may further include a second bias voltage unit electrically, which is connected to the n-type transistor and configured to apply a second positive bias voltage to a source terminal of the n-type transistor when the n-type transistor is in the off state.