The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 29, 2017

Filed:

Jul. 29, 2016
Applicant:

Electronics and Telecommunications Research Institute, Daejeon, KR;

Inventors:

Minki Kim, Daejeon, KR;

Hyun-Gyu Jang, Cheongju-si, KR;

Dong Yun Jung, Daejeon, KR;

Sang Choon Ko, Daejeon, KR;

Hyun Soo Lee, Goyang-si, KR;

Chi Hoon Jun, Daejeon, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 17/081 (2006.01); H01L 29/778 (2006.01); H01L 27/088 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H03K 17/08104 (2013.01); H01L 27/0883 (2013.01); H01L 29/2003 (2013.01); H01L 29/778 (2013.01);
Abstract

Provided is a stabilizing circuit structure using a sense field effect transistor (sense-FET). A power semiconductor module includes a depletion-mode field effect transistor (D-mode FET) and the sense FET that has same structure as the D-mode FET and varies in area. Also the power semiconductor module includes not only an enhancement-mode field effect transistor (E-mode FET), but also the stabilizing circuit including circuit elements such as a resistor, a capacitor, an inductor, or a diode.


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