The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 29, 2017

Filed:

Feb. 11, 2015
Applicant:

Alcatel Lucent, Boulogne Billancourt, FR;

Inventor:

Robert L. Willett, Warren, NJ (US);

Assignee:

Alcatel Lucent, Boulogne-Billancourt, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 43/14 (2006.01); H01L 43/06 (2006.01); G06N 99/00 (2010.01); H01L 43/04 (2006.01);
U.S. Cl.
CPC ...
H01L 43/14 (2013.01); G06N 99/002 (2013.01); H01L 43/04 (2013.01); H01L 43/065 (2013.01);
Abstract

An apparatus includes a substrate having a planar top surface, a sequence of crystalline semiconductor layers located on the planar surface, and first and second sets of electrodes located over the sequence. The sequence of crystalline semiconductor layers has a 2D quantum well therein. The first set of electrodes border opposite sides of a lateral region of the sequence and are controllable to vary a width of a non-depleted portion of the quantum well along the top surface. The second set of electrodes border first and second channels between the lateral region and first and second adjacent lateral areas of the sequence and are controllable to vary widths of non-depleted segments of the quantum well in the channels. The electrodes are located such that straight lines connecting the first and second lateral areas via the channels either pass between one of the electrodes and the substrate or are misaligned to an effective [10] lattice direction of the sequence.


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