The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 2017
Filed:
Nov. 12, 2014
Applicant:
Semicon Light Co., Ltd., Gyeonggi-do, KR;
Inventor:
Soo Kun Jeon, Gyeonggi-do, KR;
Assignee:
SEMICON LIGHT CO., LTD., Yongin-si, Gyeonggi-Do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/46 (2010.01); H01L 33/38 (2010.01); H01L 33/40 (2010.01); H01L 33/10 (2010.01); H01L 33/62 (2010.01);
U.S. Cl.
CPC ...
H01L 33/46 (2013.01); H01L 33/10 (2013.01); H01L 33/38 (2013.01); H01L 33/405 (2013.01); H01L 33/62 (2013.01);
Abstract
Disclosed is a semiconductor light emitting device including: a plurality of semiconductor layers; and a first electrode which is formed on an exposed region of the first semiconductor layer created by mesa etching portions of the second semiconductor layer, the active layer and the first semiconductor layer, and includes a contact layer in contact with the first semiconductor layer, a reflective layer formed on the contact layer, while facing an exposed region of the active layer created by mesa etching and reflecting light, and an anti-rupture layer formed on the reflective layer.