The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 2017
Filed:
Mar. 15, 2016
Applicant:
Oji Holdings Corporation, Tokyo, JP;
Inventors:
Yoshihisa Hatta, Tokyo, JP;
Kei Shinotsuka, Tokyo, JP;
Kotaro Dai, Tokyo, JP;
Yasuhito Kajita, Tokyo, JP;
Assignee:
OJI HOLDINGS CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/20 (2010.01); H01L 21/02 (2006.01); H01L 33/00 (2010.01); H01L 33/50 (2010.01); H01L 21/308 (2006.01);
U.S. Cl.
CPC ...
H01L 33/20 (2013.01); H01L 21/02019 (2013.01); H01L 21/0237 (2013.01); H01L 21/0242 (2013.01); H01L 21/0243 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02282 (2013.01); H01L 21/02285 (2013.01); H01L 21/02521 (2013.01); H01L 21/02658 (2013.01); H01L 33/007 (2013.01); H01L 33/0066 (2013.01); H01L 33/50 (2013.01); H01L 21/3081 (2013.01); H01L 21/3086 (2013.01); H01L 2933/0025 (2013.01);
Abstract
A method of manufacturing a semiconductor light emitting device, including arranging a plurality of particles in a monolayer on a substrate, dry etching the plurality of particles arranged to provide a void between the particles in a condition IN which the particles are etched while the substrate is not substantially etched; and dry etching the substrate using the plurality of particles after the particle etching step as an etching mask, thereby forming an uneven structure on one surface of the substrate.