The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 2017
Filed:
Sep. 30, 2015
Applicant:
National Technology & Engineering Solutions of Sandia, Llc, Albuquerque, NM (US);
Inventors:
Paul Davids, Albuquerque, NM (US);
Andrew Lee Starbuck, Albuquerque, NM (US);
Andrew T. S. Pomerene, Albuquerque, NM (US);
Assignee:
National Technology & Engineering Solutions of Sandia, LLC, Albuquerque, NM (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01J 1/04 (2006.01); H01L 31/107 (2006.01); H01L 31/0232 (2014.01); H01L 31/028 (2006.01);
U.S. Cl.
CPC ...
H01L 31/1075 (2013.01); H01L 31/028 (2013.01); H01L 31/02327 (2013.01);
Abstract
An avalanche diode includes an absorption region in a germanium body epitaxially grown on a silicon body including a multiplication region. Aspect-ratio trapping is used to suppress dislocation growth in the vicinity of the absorption region.